Semiconductor device and method of manufacturing thereof

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437211, 437214, 437217, 437219, H01L 2160

Patent

active

055255469

ABSTRACT:
A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability. The semiconductor device of this structure is formed by covering the inner surface and its proximity of the pad electrode opening with an elastic insulation film, forming an opening in the elastic insulation film at the bottom of the pad electrode opening, and connecting the pad electrode to an external terminal by wire bonding.

REFERENCES:
patent: 4723197 (1988-02-01), Takiar et al.
patent: 4733289 (1988-03-01), Tsurumaru
patent: 4845543 (1989-07-01), Okikawa et al.
patent: 4933305 (1990-06-01), Kikkawa
patent: 4984061 (1991-01-01), Matsumoto
patent: 4990993 (1991-02-01), Tsurumaru
patent: 5293073 (1994-03-01), Ono
"Afterglow Chemical Vapor Deposition of SiO.sub.2 ",R. L. Jackson et al., Solid State Technology, Apr. 1987, pp. 107-111.
Translation of Japan Kukai Publication 01-0220850, Sep. 1989 Toyosawa et al., 9 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-351468

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.