Semiconductor device and method of manufacturing the semiconduct

Details Semiconductor device and method of manufacturing the semiconduct Semiconductor device and method of manufacturing the semiconduct

1997-11-05

2000-03-28

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257565, 257588, 257593, 257382, 257383, 257384, 257754, 257755, H01L 3118, H01L 29540

Patent

active

060435526

ABSTRACT:
In order to prevent an epitaxial layer from contamination by metal when the epitaxial layer is formed on a substrate on which a conductor film comprising a metallic film is formed, a bipolar transistor (semiconductor device) 1 has the first conductor pattern 8 comprising a high-melting metallic film or a high-melting metallic compound film formed on the substrate 4, and the second conductor pattern 9 comprising a non-metallic film formed so as to cover the first conductor pattern 8. On the substrate 4 is formed the first conductivity type base layer 10 on the semiconductor layer comprising an epitaxial layer so as to come in contact with the second conductor pattern 9. Furthermore, when manufacturing the bipolar transistor 1, the semiconductor layer as the base layer 10 is formed with the epitaxial process after the first conductor pattern 8 is covered by the second conductor pattern 9.

REFERENCES:
patent: 5254480 (1993-10-01), Tran
patent: 5313084 (1994-05-01), Wei
patent: 5705413 (1998-01-01), Harkin et al.
patent: 5742088 (1998-04-01), Pan et al.
patent: 5760451 (1998-06-01), Yu

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