Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-07-02
1999-05-04
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 13, 257 96, 257103, 257507, 438465, H01L 3300
Patent
active
059006501
ABSTRACT:
There is disclosed a semiconductor device formed on a sapphire substrate, for example, a blue LED of a double-hetero structure having a laminated structure which comprises a first cladding layer made of a first conductivity type gallium nitride based semiconductor, an active layer made of a gallium nitride based semiconductor into which impurity is not doped intentionally, and a second cladding layer made of a second conductivity type gallium nitride based semiconductor which being opposite to the first conductivity type on a sapphire substrate. A surface of the sapphire substrate is polished to have optical transmissivity of more than 60%.
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Eckert II George C.
Kabushiki Kaisha Toshiba
Martin-Wallace Valencia
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