Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-06-30

2011-12-13

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE29345

Reexamination Certificate

active

08076753

ABSTRACT:
In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, having an N-type diffusion layer are provided on the surface region of the P-type substrate circumscribing the gate layer. The gate layer of the first MOS device, and the N-type diffusion layer of the second MOS device are connected, and the N-type diffusion layer of the first MOS device and the gate layer of the second MOS device are connected, and thereby a first capacitive element is composed.

REFERENCES:
patent: 3653978 (1972-04-01), Robinson et al.
patent: 5963840 (1999-10-01), Xia et al.
patent: 6111295 (2000-08-01), Arai
patent: 6461921 (2002-10-01), Arai
patent: 7281214 (2007-10-01), Fadell
patent: 2001/0006479 (2001-07-01), Ikehashi et al.
patent: 2001/0034250 (2001-10-01), Chadha
patent: 2006/0215890 (2006-09-01), Dunham
patent: 2006/0229099 (2006-10-01), Chen et al.
patent: 49040684 (1947-08-01), None
patent: 62265752 (1987-11-01), None
patent: 63308366 (1988-12-01), None
patent: 63308366 (1988-12-01), None
patent: 2004172633 (2004-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4314777