Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S531000, C257S664000, C257S690000, C257S692000, C257S698000, C257S700000, C257S737000, C257S774000

Reexamination Certificate

active

08067814

ABSTRACT:
In the present invention, a first circuit pattern3composing a semiconductor element is formed on the front side of a substrate1, a first insulating layer2is formed on the first circuit pattern3, solder electrodes5for external connection are formed on the first insulating layer2, a second insulating layer6is formed on the backside of the substrate1, a second circuit pattern7is formed on the second insulating layer6, through vias8are formed to connect the first circuit pattern3and the second circuit pattern7, chip passive components9are placed on the second circuit pattern7, and the backside of the substrate is integrally molded with epoxy resin10such that the epoxy resin10covers the chip passive components9.

REFERENCES:
patent: 2004/0125579 (2004-07-01), Konishi et al.
patent: 2006/0040423 (2006-02-01), Savastibuk et al.
patent: 2007/0210866 (2007-09-01), Sato et al.
patent: 2008/0284018 (2008-11-01), Chainer
patent: 2009/0224318 (2009-09-01), Hatori et al.
patent: 1536631 (2004-10-01), None
patent: 2006-41401 (2006-02-01), None

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