Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE23023, C257S778000, C257S780000

Reexamination Certificate

active

08049343

ABSTRACT:
There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bonding pad formed on a surface of the electrode pad through an intermediate layer, and a resin insulating film for covering a peripheral edge of the bonding pad such that an interface of the bonding pad and the intermediate layer is not exposed to a side wall.

REFERENCES:
patent: 4914057 (1990-04-01), Gloton
patent: 5130275 (1992-07-01), Dion
patent: 5266526 (1993-11-01), Aoyama et al.
patent: 5436198 (1995-07-01), Shibata
patent: 5567981 (1996-10-01), Bhansali et al.
patent: 5656858 (1997-08-01), Kondo et al.
patent: 5656863 (1997-08-01), Yasunaga et al.
patent: 5704116 (1998-01-01), Gamota et al.
patent: 5757078 (1998-05-01), Matsuda et al.
patent: 5907786 (1999-05-01), Shinomiya
patent: 6097087 (2000-08-01), Farnworth et al.
patent: 6111317 (2000-08-01), Okada et al.
patent: 6163075 (2000-12-01), Okushima
patent: 6232147 (2001-05-01), Matsuki et al.
patent: 6303880 (2001-10-01), Asai et al.
patent: 6303977 (2001-10-01), Schroen et al.
patent: 6362087 (2002-03-01), Wang et al.
patent: 6424036 (2002-07-01), Okada
patent: 6455408 (2002-09-01), Hwang et al.
patent: 6479900 (2002-11-01), Shinogi et al.
patent: 6504252 (2003-01-01), Matsunaga
patent: 6656828 (2003-12-01), Maitani et al.
patent: 6674162 (2004-01-01), Takao
patent: 6835595 (2004-12-01), Suzuki et al.
patent: 7319277 (2008-01-01), Lin
patent: 2002/0022301 (2002-02-01), Kwon et al.
patent: 2003/0013291 (2003-01-01), Chen et al.
patent: 2003/0034550 (2003-02-01), Nakatani
patent: 0 661 742 (1995-07-01), None
patent: 57-106140 (1982-07-01), None
patent: 3-16145 (1991-01-01), None
patent: 6-196526 (1994-07-01), None
patent: 7-273142 (1995-10-01), None
patent: 11-40601 (1999-02-01), None
patent: 2000-40773 (2000-02-01), None
patent: 2000-100847 (2000-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4305653

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.