Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-15

2011-10-25

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C257S501000, C257SE21625, C438S294000

Reexamination Certificate

active

08044487

ABSTRACT:
A semiconductor device including a high voltage element and a low voltage element, including: a semiconductor substrate having high voltage element region where the high voltage element is formed, and a low voltage element region where the low voltage element is formed; a first LOCOS isolation structure disposed in the high voltage element region; and a second LOCOS isolation structure disposed in the low voltage element region, wherein the first LOCOS isolation structure includes a LOCOS oxide film formed on a surface of the semiconductor substrate and a CVD oxide film formed on the LOCOS oxide film, and the second LOCOS isolation structure includes a LOCOS oxide film.

REFERENCES:
patent: 6392275 (2002-05-01), Jang
patent: 6638804 (2003-10-01), Kanda et al.
patent: 2005/0088898 (2005-04-01), Hsu et al.
patent: 2007/0057293 (2007-03-01), Kao
patent: 63-255938 (1988-10-01), None
patent: 64-77941 (1989-03-01), None
patent: 2003-124343 (2003-04-01), None
Office Action, in Japanese Patent Application No. 2006-037391, filed Nov. 30, 2010.

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