Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2009-06-02

2011-10-25

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000

Reexamination Certificate

active

08044440

ABSTRACT:
The invention is directed to providing a smaller semiconductor device formed as an optical sensor including a light receiving portion and a light emitting portion. A light receiving portion and a light emitting portion are disposed on a front surface of a semiconductor substrate for forming a semiconductor die, and a supporting body is attached to these so as to face these with an adhesive being interposed therebetween. A first opening exposing the light receiving portion from the front side of the supporting body is provided, and in a separated position therefrom, a second opening exposing the light emitting portion from the front side of the supporting body is provided. A first electrode and a second electrode are further disposed on the front surface of the semiconductor substrate, and bump electrodes electrically connected to these are disposed on the back surface of the semiconductor substrate.

REFERENCES:
patent: 5055894 (1991-10-01), Chan
patent: 6881979 (2005-04-01), Starikov et al.
patent: 2003/0080341 (2003-05-01), Sakano et al.
patent: 2006/0255280 (2006-11-01), Shibayama
patent: 2008/0220535 (2008-09-01), LeBoeuf et al.
patent: 2009/0272430 (2009-11-01), Cornfeld et al.
patent: 2001-183458 (2001-07-01), None
Japanese Patent [06-132330] [machine's translation].

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