Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2010-08-27

2011-12-06

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making passive device

C438S652000, C438S095000, C257S002000, C257S005000, C257S331000

Reexamination Certificate

active

08071456

ABSTRACT:
Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.

REFERENCES:
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patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 7071485 (2006-07-01), Takaura et al.
patent: 2003/0209746 (2003-11-01), Horii
patent: 2006-287222 (2006-10-01), None
patent: 2006-294970 (2006-10-01), None
patent: 2006-352082 (2006-12-01), None
Y.N. Hwang et al., “Writing Current Reduction for High-density Phase-change RAM,”International Electron Devices Meeting (2003), pp. 893-896.
Chinese Office Action, with partial English translation, issued in Chinese Patent Application No. 200810178685.3, dated Sep. 6, 2011.

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