Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-12-19

2011-11-15

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S384000, C257S753000, C257S758000

Reexamination Certificate

active

08058734

ABSTRACT:
A semiconductor device including a semiconductor substrate; a first insulating film formed on the semiconductor substrate including a contact hole opened therethrough; a lower plug filled in the contact hole having a recess defined in an upper portion thereof; a second insulating film including a via hole opened therethrough; a third insulating film formed on an inner surface of the via hole and extending in a predetermined depth from an upper edge of the via hole so as to reduce a cross sectional area thereof; and an upper plug filled in the via hole that has a protrusion formed on a lower portion thereof that conforms to the recess to electrically connect the upper and the lower plug.

REFERENCES:
patent: 6191027 (2001-02-01), Omura
patent: 6436814 (2002-08-01), Horak et al.
patent: 6649508 (2003-11-01), Park et al.
patent: 6680538 (2004-01-01), Kim et al.
patent: 7034398 (2006-04-01), Kajita et al.
patent: 2003/0162353 (2003-08-01), Park
patent: 2008/0067678 (2008-03-01), Kim
patent: 10-200067 (1998-07-01), None
patent: 10-233445 (1998-09-01), None

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