Patent
1986-10-29
1989-09-26
Hille, Rolf
357 43, 357 49, H01L 2348, H01L 2330
Patent
active
048704750
ABSTRACT:
A method of manufacturing a semiconductor device, has the steps of forming an element on a semiconductor substrate, adhering an element formation surface of the semiconductor substrate to another substrate through an insulating adhesive layer, removing the semiconductor substrate till the element formation layer is exposed, forming an insulating film on the element formation layer, removing the insulating film at a portion where contact holes are to be formed to expose the element formation layer or till the underlying element formation layer is exposed to expose electrode wirings, and forming wiring patterns connected thereto. A bipolar transistor manufactured by this method is also disclosed.
REFERENCES:
patent: 4292730 (1981-10-01), Ports
patent: 4523963 (1985-06-01), Ohta et al.
patent: 4543595 (1985-09-01), Vora
"MOS Transistors in Thin Monocrystalline Silicon Layers", J. A. van Nielen, M. J. J. Theunissen and J. A. Apples.
"Thin Silicon Film on Insulating Substrate", Greg L. Kuhn and C. John Rhee, Motorola Incorporated, Semiconductor Research and Development Laboratories, Semiconductor Products Division, Phoenix, Arizona 85008.
"Silicon-On-Insulator (SOI) by Bonding and Etch-Back", J. B. Lasky, S. R. Stiffler, F. R. White, J. R. Abernathey, IBM General Technology Division Essex Junction, Vermont 05452.
Endo Nobuhiro
Hamaguchi Tsuneo
Clark S. V.
Hille Rolf
NEC Corporation
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