Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S535000, C257SE29343

Reexamination Certificate

active

08044491

ABSTRACT:
The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

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patent: 5929473 (1999-07-01), Nishihori et al.
patent: 6680521 (2004-01-01), Kar-Roy et al.
patent: 6713840 (2004-03-01), Lee et al.
patent: 6885081 (2005-04-01), Morimoto
patent: 7282404 (2007-10-01), Coolbaugh et al.
patent: 2003/0011043 (2003-01-01), Roberts
patent: 2005/0064658 (2005-03-01), Biery et al.
patent: 2006/0145293 (2006-07-01), Cho
patent: 8-274256 (1996-10-01), None

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