Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-01-10
2011-10-04
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21008, C257SE29342, C438S393000, C438S937000
Reexamination Certificate
active
08030737
ABSTRACT:
A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided.
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Chinese Patent Office issued a Chinese Office Action dated May 22, 2009, Application No. 2008100812634.
Ohto Koichi
Onuma Takuji
Oshida Daisuke
Takewaki Toshiyuki
Carpenter Robert
Renesas Electronics Corporation
Richards N Drew
Young & Thompson
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