Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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C438S618000

Reexamination Certificate

active

07728424

ABSTRACT:
A semiconductor device including: a semiconductor substrate having an electrode; a resin protrusion formed on a surface of the semiconductor substrate on which the electrode is formed, the resin protrusion extending along a straight line and having a sloping region of which a height decreases along the straight line as a distance from a center of the resin protrusion increases; and an interconnect electrically connected to the electrode and extending over the sloping region of the resin protrusion.

REFERENCES:
patent: 5261158 (1993-11-01), Schreiber et al.
patent: 5477087 (1995-12-01), Kawakita et al.
patent: 7312533 (2007-12-01), Haimerl et al.
patent: 2003/0166333 (2003-09-01), Takahashi
patent: 2005/0230773 (2005-10-01), Saito et al.
patent: 2005/0236104 (2005-10-01), Tanaka
patent: A-2-272737 (1990-07-01), None
patent: A 02-272737 (1990-11-01), None
patent: A-2001-110831 (2001-04-01), None
patent: 2005109100 (2005-04-01), None
Machine translation of JP 2005109100.

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