Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...

Reexamination Certificate

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C438S689000

Reexamination Certificate

active

07737041

ABSTRACT:
A semiconductor device comprises a semiconductor layer including a plurality of paralleled linear straight sections extending in a first direction. The layer also includes a plurality of connecting sections each having a width in the first direction sufficient to form a wire-connectable contact therein and arranged to connect between adjacent ones of the straight sections in a second direction. The connecting sections have respective ends formed aligned with a first straight line parallel to the second direction.

REFERENCES:
patent: 5953611 (1999-09-01), Tanaka
patent: 6151249 (2000-11-01), Shirota et al.
patent: 7253118 (2007-08-01), Tran et al.
patent: 2004/0253525 (2004-12-01), Kanai
patent: 2006/0211260 (2006-09-01), Tran et al.
patent: 2008/0017992 (2008-01-01), Kito et al.
patent: 2008/0017996 (2008-01-01), Sato et al.
patent: 2582412 (1996-11-01), None
patent: 11-176956 (1999-07-01), None
patent: 3207592 (2001-07-01), None
patent: 2006-303022 (2006-11-01), None
patent: 2007-305970 (2007-11-01), None
patent: 2008-27978 (2008-02-01), None

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