Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2009-03-31

2010-06-15

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S700000, C257SE25006

Reexamination Certificate

active

07737543

ABSTRACT:
A semiconductor device includes a semiconductor construction assembly having a semiconductor substrate which has first and second surfaces, and has an integrated circuit element formed on the first surface, a plurality of connection pads which are connected to the integrated circuit element, a protective layer which covers the semiconductor substrate and has openings for exposing the connection pads, and conductors which are connected to the connection pads, arranged on the protective layer, and have pads. An upper insulating layer covers the entire upper surface of the semiconductor construction assembly including the conductors except the pads. A sealing member covers at least one side surface of the semiconductor construction assembly. An upper conductors is formed on the upper insulating layer, and has one ends electrically connected to the pads and an external connection pads, respectively, an external connection pad of at least one of the upper conductors being disposed in a region corresponding to the sealing member.

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