Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-01-30
2010-12-21
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31117
Reexamination Certificate
active
07855425
ABSTRACT:
The invention is directed to providing a smaller semiconductor device having a light emitting element with a low manufacturing cost and a method of manufacturing the same. An adhesive layer9and conductive pastes10a,10bare selectively applied to a front surface of a semiconductor substrate6. Then, a light emitting element (a LED die4) is formed on the semiconductor substrate6. A P type semiconductor layer3is connected to the conductive paste10a, and an N type semiconductor layer2is connected to the conductive paste10b. The LED die4is thus electrically connected to pad electrodes 8a,8bthrough the conductive pastes10a,10b. Then, a protection layer12having openings in the positions corresponding to the pad electrodes8a,8bis formed on the semiconductor substrate6. Electrode connection layers13and conductive terminals14are then formed on the pad electrodes8a,8b,8cin the openings. The protection layer12, the semiconductor substrate6and so on are then cut along a predetermined dicing line DL and separated into individual dies.
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Ha Nathan W
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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