Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-06-14

2010-06-29

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

C438S570000, C438S572000, C438S573000, C438S582000, C438S583000, C438S597000, C438S652000, C438S655000, C438S656000, C438S660000

Reexamination Certificate

active

07745317

ABSTRACT:
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

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