Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-03-30
2010-06-22
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23002, C257SE23020, C257SE23021
Reexamination Certificate
active
07741713
ABSTRACT:
After a plurality of pads (2) are formed on an insulation film (1), a passivation film (3) is formed on the entire surface thereof, and opening parts (3a) which exposes all the pads (2) are formed in the passivation film (3). Next, another passivation film is formed on the entire surface and, for each of the pads (2), an opening part is formed in this passivation film to expose the central portion of the pad (2). According to the above method, the probing test can be performed with the opening parts (3a) formed in the passivation film (3). Performing the probing test in such a state increases the probability that the probe contacts the pad (2) since the entire surface of the pad (2) is exposed, thereby providing the test with a higher accuracy. Thus, the pad can be miniaturized and/or the pitch can be narrowed without requiring a higher accuracy of the probe.
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Prior Art Information List.
Fujitsu Semiconductor Limited
Ho Hoang-Quan T
Huynh Andy
Westerman Hattori Daniels & Adrian LLP
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