Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-05-16

2010-02-02

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S455000, C361S790000, C174S255000, C257SE21503

Reexamination Certificate

active

07655504

ABSTRACT:
Two semiconductor substrates are first bonded together by means of a metal bump, while respective one-side surfaces on which device patterns are formed are faced each other, and a resin is then filled into a gap between the respective one-side surfaces and thereafter each of the semiconductor substrates is polished and thinned to a prescribed thickness. Furthermore, a via hole and an insulating film are formed; part of a portion in contact with the metal bump, of the insulating film, is opened; the inside of the via hole is filled with a conductor; and an electrode pad is formed on the conductor, to thereby form structures. Finally, a required number of structures are electrically connected with each other through the electrode pad and stacked to thereby obtain a semiconductor device.

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