Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2008-09-04
2010-02-09
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S734000, C257SE23033, C257SE33068, C228S180500, C228S004500, C420S507000
Reexamination Certificate
active
07659635
ABSTRACT:
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400.
REFERENCES:
patent: 6492593 (2002-12-01), Murai et al.
patent: 6854637 (2005-02-01), Harun et al.
patent: 2003/0034097 (2003-02-01), Ogasa
patent: 5-82576 (1993-04-01), None
patent: 6-145842 (1994-05-01), None
patent: 10-340979 (1998-12-01), None
patent: 2000-12583 (2000-01-01), None
patent: 2000-12746 (2000-01-01), None
patent: 2001-15541 (2001-01-01), None
patent: 2002-359261 (2002-12-01), None
patent: 2002-363395 (2002-12-01), None
patent: 2003-86622 (2003-03-01), None
patent: 2004-356382 (2004-12-01), None
Aga Fumiaki
Arakawa Hideyuki
Kuraya Hidetoshi
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Renesas Technology Corp.
Tran Long K
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4170376