Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

Reexamination Certificate

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Details

C257S734000, C257SE23033, C257SE33068, C228S180500, C228S004500, C420S507000

Reexamination Certificate

active

07659635

ABSTRACT:
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400.

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patent: 6854637 (2005-02-01), Harun et al.
patent: 2003/0034097 (2003-02-01), Ogasa
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patent: 2004-356382 (2004-12-01), None

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