Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C430S327000

Reexamination Certificate

active

07833912

ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor device including a semiconductor substrate which includes a number of chip areas, a processed film which is formed on the semiconductor substrate, and a ring-shaped pattern which is formed on the processed film and along a peripheral portion of the semiconductor substrate.

REFERENCES:
patent: 4510176 (1985-04-01), Cuthbert et al.
patent: 5323049 (1994-06-01), Motonami
patent: 5618380 (1997-04-01), Siems et al.
patent: 5879577 (1999-03-01), Weng et al.
patent: 6140254 (2000-10-01), Endisch et al.
patent: 6573027 (2003-06-01), Imai
patent: 2005/0202346 (2005-09-01), Yamano
patent: 2006/0003591 (2006-01-01), Cheng et al.
patent: 6-275613 (1994-09-01), None
patent: 7-297492 (1995-11-01), None
patent: 11-68067 (1999-03-01), None

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