Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-08

2009-11-24

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S758000, C257S173000, C257S355000, C257SE23116

Reexamination Certificate

active

07622792

ABSTRACT:
A conductive region electrically connected to a buffer coat film is formed on at least one corner of a semiconductor substrate, so that electricity charged on a package seal resin or a surface of the buffer coat film is allowed to flow toward the conductive region through a conductive path. Thus, density of the electricity charged on the package seal resin or the surface of the buffer coat film is lowered, and electric discharge can be suppressed. Since the electric discharge is suppressed, no high voltage is applied to an external input/output terminal. As a result, it is possible to prevent a circuit metal wire connected to an integrated circuit from being fused and an interlayer insulating film from being damaged.

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