Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-09-01

2009-02-10

Vortman, Anatoly (Department: 2835)

Electricity: electrothermally or thermally actuated switches

Electrothermally actuated switches

Fusible element actuated

C337S401000, C337S416000, C257S209000, C257S529000

Reexamination Certificate

active

07489230

ABSTRACT:
A semiconductor device includes a first insulating layer, which is formed on a semiconductor substrate (not shown), and formed with a concave portion, and an electric fuse which has a conductive member, a first terminal provided on one end and a second terminal provided on the other end of the conductive member, and which is provided on the first insulating layer. The first insulating layer is embedded with the conductive member. The conductive member has a flowing-out region in which a material forming the conductive member flows out to the outside of the concave portion, and is cut at a location different from the flowing-out region.

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patent: 2005-39220 (2005-02-01), None
patent: 2005-57186 (2005-03-01), None

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