Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-02-29
2009-10-20
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S399000, C257S295000, C257S535000, C257SE27048
Reexamination Certificate
active
07605007
ABSTRACT:
An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M1Ox2, a second conductive oxidation layer made of an oxide expressed by a chemical formula M2Oy2and a third conductive oxidation layer. Here, the second conductive oxidation layer is formed to have a degree of oxidation higher than the first conductive oxidation layer and the third conductive oxidation layer, and among the composition parameters x1, x2, y1, y2, z1and z2, there are the following relations,in-line-formulae description="In-line Formulae" end="lead"?y2/y1>x2/x1, y2/y1>z2/z1, andz2/z1≧x2/x1.in-line-formulae description="In-line Formulae" end="tail"?
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Blum David S
Fujitsu Microelectronics Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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