Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-02-28

2009-02-10

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Emitter region feature

C257S165000, C257S197000, C257S273000, C257S565000

Reexamination Certificate

active

07488993

ABSTRACT:
A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50 micrometers or greater in thickness residing on parts of the upper surface side of the semiconductor substrate other than at least on the electrode pattern. And a method of manufacturing a semiconductor device, includes: forming elements on a semiconductor substrate; forming electrodes in a predetermined part on the elements; affixing an insulator sheet of 50 micrometers or greater in thickness to the upper surface side of the semiconductor substrate, the insulator sheet being processed to remove some parts so as to be aligned with the electrodes or regions where the elements are provided, processing a back surface side of the semiconductor substrate affixed within the insulator sheet to form the semiconductor substrate of 100 micrometers or lower in thickness, and dicing the semiconductor substrate into semiconductor chips.

REFERENCES:
patent: 5742468 (1998-04-01), Matsumoto et al.
patent: 6476501 (2002-11-01), Ohuchi et al.
patent: 6689639 (2004-02-01), Sakuyama et al.
patent: 6841862 (2005-01-01), Kikuchi et al.
patent: 7129110 (2006-10-01), Shibata
patent: 9-64049 (1997-03-01), None
patent: 411340270 (1999-12-01), None
patent: 2002-100589 (2002-04-01), None

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