Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2006-12-07
2009-10-20
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000, C257S620000, C257SE23145
Reexamination Certificate
active
07605457
ABSTRACT:
The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.
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Fukuyama Ryota
Hoshino Masataka
Kasai Junichi
Masuda Naomi
Meguro Kouichi
Parekh Nitin
Spansion LLC
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