Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-11-21

2009-11-17

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S555000, C257SE27057, C257SE29034, C257SE29183, C257SE21375, C438S370000

Reexamination Certificate

active

07619299

ABSTRACT:
In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. In the substrate and the epitaxial layer, an N type buried diffusion layer is formed on a P type buried diffusion layer. With this structure, an upward expansion of the P type buried diffusion layer is checked and a thickness of the epitaxial layer can be made small while maintaining the breakdown voltage characteristics of a power semiconductor element. Accordingly, a device size of a control semiconductor element can be reduced.

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