Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1988-02-17

1990-03-27

Laroche, Eugene R.

Stock material or miscellaneous articles

Composite

Of bituminous or tarry residue

428620, 428627, H01L 2348, H01L 2944, H01L 2912, B32B 1504

Patent

active

049125427

ABSTRACT:
Disclosed is a semiconductor device having a metal-silicon alloy wiring layer and a structure wherein a metal compound, having a larger free energy decrease caused by compound formation, than a free energy decrease caused by the metal-silicon alloy formation, is precipitated. A method of fabricating the semiconductor device having the above microstructure is also disclosed. In the semiconductor device, the grain boundaries are micronized by precipitation of a metal compound, thus the mechanical strength can be improved, and the circuit reliability can also be improved. Further, an increase in resistance can be suppressed by precipitation of the metal compound.

REFERENCES:
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4502207 (1985-03-01), Ohshima et al.

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