Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2006-06-02
2009-12-01
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C438S404000, C438S406000, C438S411000, C438S424000, C438S459000
Reexamination Certificate
active
07625809
ABSTRACT:
A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.
REFERENCES:
patent: 5187377 (1993-02-01), Katoh
patent: 5466631 (1995-11-01), Ichikawa et al.
patent: 2002/0096994 (2002-07-01), Iwafuchi et al.
patent: 2004/0115849 (2004-06-01), Iwafuchi et al.
patent: 1343013 (2002-04-01), None
patent: 1-225377 (1989-09-01), None
patent: 2-7588 (1990-01-01), None
patent: 2001-244543 (2001-09-01), None
patent: 2002-33546 (2002-01-01), None
patent: 2003-86836 (2003-03-01), None
Fujiwara Hiroyuki
Suzuki Takahito
Oki Data Corporation
Rabin & Berdo PC
Wojciechowicz Edward
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