Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-09-13
2009-06-23
Goudreau, George A. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S003000, C438S714000, C438S717000, C438S734000, C438S736000, C438S950000, C430S005000
Reexamination Certificate
active
07550392
ABSTRACT:
A semiconductor device manufacturing method, includes a step of forming a first alumina film (underlying insulating film)37on a semiconductor substrate20, a step of forming a first conductive film41, a ferroelectric film42, and a second conductive film43in sequence on the first alumina film37, a step of forming a mask material film45on the second conductive film43, a step of shaping the mask material film45into an auxiliary mask45a, a step of shaping the second conductive film43into an upper electrode43aby an etching using the auxiliary mask45aand a first resist pattern46as a mask, a step of shaping the ferroelectric film42into a capacitor dielectric film42aby patterning, and a step of shaping the first conductive film41into a lower electrode41aby patterning, whereby a capacitor Q is constructed by the lower electrode41, the capacitor dielectric film42a, and the upper electrode43a.
REFERENCES:
patent: 6225156 (2001-05-01), Cuchiaro et al.
patent: 6420272 (2002-07-01), Shen et al.
patent: 6713310 (2004-03-01), Song et al.
patent: 6737692 (2004-05-01), Gabric et al.
patent: 6841819 (2005-01-01), Saito et al.
patent: 7041511 (2006-05-01), Zhang et al.
patent: 2003/0143853 (2003-07-01), Celii et al.
patent: 2003-258127 (2003-09-01), None
patent: 2003-273328 (2003-09-01), None
patent: 2003-318371 (2003-11-01), None
patent: 2004-47943 (2004-02-01), None
patent: 2004-241679 (2004-08-01), None
patent: 2004-247324 (2004-09-01), None
patent: 2004-253627 (2004-09-01), None
patent: 2004-311868 (2004-11-01), None
patent: 2005-123392 (2005-05-01), None
Kiuchi Kenji
Komuro Genichi
Fujitsu Microelectronics Limited
Goudreau George A.
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4069402