Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-05-22
2009-11-17
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C438S199000
Reexamination Certificate
active
07619239
ABSTRACT:
A semiconductor device includes an n-channel MIS transistor and a p-channel MIS transistor on a semiconductor layer formed on an insulating layer, in which the channel of the n-channel MIS transistor is formed of a strained Si layer having biaxial tensile strain and the channel of the p-channel MIS transistor is formed of a strained SiGe layer having uniaxial compression strain in the channel length direction.
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Tsutomu Tezuka et al, “A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs”, 2001, Jpn. J. Apply. Phys., vol. 40, pp. 2866-2874.
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Chinese Patent Office Notification of the First Office Action issued in copending Application No. 2006-10087750.2 mailed Feb. 15, 2008, and English language translation thereof.
Tezuka et al., “Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation,” Journal of Applied Physics (Dec. 15, 2003), 94:7553-59.
Tezuka et al., “A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs,” Jpn. J. Appl. Phys. (Apr. 2001), 40:2866-74.
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Irisawa Toshifumi
Numata Toshinori
Sugiyama Naoharu
Takagi Shin-ichi
Tezuka Tsutomu
Chi Suberr
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Loke Steven
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