Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-01-03

2008-08-19

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21664

Reexamination Certificate

active

07413913

ABSTRACT:
Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.

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