Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-09

2008-10-07

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

C257S133000, C257S139000

Reexamination Certificate

active

07432135

ABSTRACT:
A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first major surface of the semiconductor substrate; a base layer of a second conductivity type formed on the first major surface of the semiconductor layer and separated by the semiconductor layer from the semiconductor substrate; a pair of groove portions penetrating the base layer from the first major surface and reaching at least the semiconductor layer; an insulation film disposed inside the groove portion and a gate electrode formed inside the groove portion through the insulation film; a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on the second major surface of the semiconductor substrate; and an emitter region disposed on the first major surface of the base layer and along the groove portions, wherein a transistor controlling a current flowing in the base layer by the gate electrode and a diode made of the semiconductor layer and the base layer are disposed within the semiconductor device, and the emitter region is disposed only in an area which is between the pair of groove portions.

REFERENCES:
patent: 6153896 (2000-11-01), Omura et al.
patent: 6566691 (2003-05-01), Inoue et al.
patent: 6781199 (2004-08-01), Takahashi
patent: 6809349 (2004-10-01), Yamaguchi et al.
patent: 2005/0017290 (2005-01-01), Takahashi et al.
patent: 2005/0045960 (2005-03-01), Takahashi

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