Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2004-05-17

2008-09-09

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S289000, C257S411000, C257S412000, C257SE27060, C257SE29150, C257SE29242

Reexamination Certificate

active

07422953

ABSTRACT:
There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.

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