Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1998-02-03
2000-07-04
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257336, 257344, 257408, H01L 2900
Patent
active
060842830
ABSTRACT:
A high-breakdown voltage MOSFET has source and drain layers arranged to interpose a channel region therebetween in a channel-length direction and to have LDD portions having a low carrier-impurity concentration, respectively, on sides facing each other. A gate electrode faces the channel region through an insulating film. The LDD portion of the drain layer has a lower carrier-impurity concentration and a longer length in the channel-length direction, than those of the LDD portion of the source layer.
REFERENCES:
patent: 5436482 (1995-07-01), Ogoh
patent: 5451807 (1995-09-01), Fujita
patent: 5585658 (1996-12-01), Mukai et al.
patent: 5612914 (1997-03-01), Liu et al.
patent: 5789787 (1998-08-01), Kadosh et al.
patent: 5831306 (1998-11-01), Gardner et al.
patent: 5877531 (1999-03-01), Fukatsu et al.
Eckert II George C.
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1488936