Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-10-23
2007-10-23
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S501000, C257SE27064
Reexamination Certificate
active
11117689
ABSTRACT:
A semiconductor device includes a first n-type source/drain region48aand a second p-type source/drain region48bformed on a semiconductor substrate20away from side surfaces of first and second gate electrodes39a,39bat a first interval W4respectively, a second n-type source/drain region48cand a first p-type source/drain region48dformed on the semiconductor substrate20away from side surfaces of third and fourth gate electrodes39c,39dat a second interval W3, which is wider than the first interval W4, respectively, and third and fourth insulating sidewalls43c,43dextended onto source/drain extensions42c,42don both sides of third and fourth gate electrodes39c,39dfrom edges of upper surfaces of the third and fourth gate electrodes39c,39drespectively.
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Katayama Masaya
Ohkawa Narumi
Fujitsu Limited
Pham Hoai
Westerman, Hattori, Daniels & Adrian , LLP.
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