Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-02-06
2007-02-06
Ha, Nathan (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S359000
Reexamination Certificate
active
10981608
ABSTRACT:
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
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Eguchi Shingo
Fujimoto Etsuko
Murakami Satoshi
Yamazaki Shunpei
Fish & Richardson P.C.
Ha Nathan
Semiconductor Energy Laboratory Co,. Ltd.
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