Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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C257S778000

Reexamination Certificate

active

10902467

ABSTRACT:
The present invention provides a semiconductor device capable of improving productivity while maintaining electrical characteristics, and a manufacturing method thereof. One characteristic point of the present invention is that a plating processing condition (A) for forming a metal wiring layer (redistribution wiring) corresponding to a first conductive layer and a plating processing condition (B) for forming a post electrode corresponding to a second conductive layer are made different from each other.

REFERENCES:
patent: 5677576 (1997-10-01), Akagawa
patent: 6111317 (2000-08-01), Okada et al.

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