Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-01
2007-05-01
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257S751000, C257S762000, C438S627000, C438S687000
Reexamination Certificate
active
10767335
ABSTRACT:
There is provided a method of manufacturing a semiconductor device in which interconnect capacitance is restrained. The semiconductor device200comprises a semiconductor substrate; a second interconnect insulating film216constituted of a ladder-type hydrogen siloxane formed on the semiconductor substrate; a second protection film217provided on the second interconnect insulating film216;and an upper interconnect270formed in the second interconnect insulating film216and the second protection film217. The second interconnect insulating film216is constituted of for example an L-Ox™ (trademark) film, and the second protection film217is constituted of for example a silicon oxide film.
REFERENCES:
patent: 3818064 (1974-06-01), Kim
patent: 5848687 (1998-12-01), Shultz
patent: 5906859 (1999-05-01), Bremmer et al.
patent: 6074695 (2000-06-01), Kobayashi et al.
patent: 6149966 (2000-11-01), Kobayashi et al.
patent: 6214748 (2001-04-01), Kobayashi et al.
patent: 6231989 (2001-05-01), Chung et al.
patent: 6329490 (2001-12-01), Yamashita et al.
patent: 6358804 (2002-03-01), Kobayashi et al.
patent: 6440550 (2002-08-01), Hacker
patent: 6472076 (2002-10-01), Hacker
patent: 6558755 (2003-05-01), Berry et al.
patent: 6576300 (2003-06-01), Berry et al.
patent: 6576345 (2003-06-01), Van Cleemput et al.
patent: 6663902 (2003-12-01), Hei et al.
patent: 6696352 (2004-02-01), Carr et al.
patent: 2004/0046261 (2004-03-01), Ohto et al.
patent: 2004/0195582 (2004-10-01), Tomita et al.
patent: 2005/0049382 (2005-03-01), Lyu et al.
patent: 2001-176965 (2001-06-01), None
Duane Bujalski et al., Compositional And strcutural Analysis of .. Resin, Dec. 2002 ,Macromolecules, 2003, 36 pp. 180-917.
Masafumi Unno et al., “Synthesis ands Characterization Of Cage and Bicyclic Silsequioxanes..Silanols”, 1999, Applied organometallic chemisrty 13, pp. 303-310.
Kunishima Hiroyuki
Shiba Kazutoshi
NEC Electronics Corporation
Rao Shrininvas H.
Weiss Howard
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