Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2007-06-12
2007-06-12
Potter, Roy Karl (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S676000, C438S123000
Reexamination Certificate
active
11119745
ABSTRACT:
A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
REFERENCES:
patent: 5218231 (1993-06-01), Kudo
patent: 5977630 (1999-11-01), Woodworth et al.
patent: 6040626 (2000-03-01), Cheah et al.
patent: 6319755 (2001-11-01), Mauri
patent: 6465276 (2002-10-01), Kuo
patent: 6849930 (2005-02-01), Nakajima et al.
patent: 6873041 (2005-03-01), Crowley et al.
patent: 1 191 589 (2002-03-01), None
patent: 59-48947 (1984-03-01), None
patent: 4-180640 (1992-06-01), None
patent: 06-268027 (1994-09-01), None
patent: 10-261756 (1998-09-01), None
patent: 2000-114445 (2000-04-01), None
patent: 2000-124269 (2000-04-01), None
patent: 2000-183099 (2000-06-01), None
patent: 2000-243784 (2000-09-01), None
patent: WO 01/15216 (2001-03-01), None
Funato Norihide
Nanba Masataka
Sawano Hiroshi
Kabushiki Kaisha Toshiba
Oblon, Spivak, McClelland, Maier & Neustadt, P.C
Potter Roy Karl
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3821358