Metal treatment – Compositions – Heat treating
Patent
1981-10-02
1985-12-24
Smith, John D.
Metal treatment
Compositions
Heat treating
29571, 29576B, 156628, 156643, 1566591, 427 93, 427 94, 427259, H01L 21265
Patent
active
045604215
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device comprising a step of forming a field region formation insulating film on a semiconductor substrate, a step of forming a mask pattern covering a portion of the insulating film corresponding to an intended element region, a step of ion implanting a field inversion prevention impurity into an element isolation region of the substrate with the mask pattern used as a shield, a step of forming an etching-proof layer on a portion of the insulating film corresponding to a field region, a step of removing the mask pattern to let an etching-proof layer portion be left on the intended element isolation region, and a step of selectively etching the insulating film with the remaining etching-proof layer used as a mask to form the element isolation region. Also disclosed is a semiconductor device manufactured by making use of this method.
REFERENCES:
patent: 4352716 (1982-10-01), Schaible
patent: 4376658 (1983-03-01), Sigusch
patent: 4377438 (1983-03-01), Moriya
Iwai Hiroshi
Maeda Satoshi
Smith John D.
Tokyo Shibaura Denki Kabushiki Kaisha
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