Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-01-30

2007-01-30

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S588000, C257S592000

Reexamination Certificate

active

10813446

ABSTRACT:
An aspect of a semiconductor device includes: a collector layer of first conductive type formed on a semiconductor substrate; a graft base layer of second conductive type formed in a surface region of the collector layer; a first base leading-out region of second conductive type formed on the graft base layer; a second base leading-out region of second conductive type formed on an upper surface and a side surface of the first base leading-out region; a base layer of second conductive type formed on the collector layer; an emitter layer of first conductive type formed in a surface region of the base layer; and an emitter leading-out region formed on the emitter layer.

REFERENCES:
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patent: 2001-068479 (2001-03-01), None
patent: 2002-270819 (2002-09-01), None

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