Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-09-11

2007-09-11

Picardat, Kevin M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S773000, C257S775000, C438S638000, C438S668000

Reexamination Certificate

active

11397707

ABSTRACT:
There is disclosed a semiconductor device comprising at least one first insulating film provided above a substrate, being formed with at least one first recess having a first width, and being formed with at least one second recess having a second width which is 1/x (x: positive numbers larger than 1) a size of the first width and having a same depth as the first recess, a second insulating film provided at both sides of the first recess and at a lower part of the second recess, and a conductor provided inside of the second insulating films provided at the both sides of the first recess with extending from an opening of the first recess to a bottom surface thereof, and provided with extending from an opening of the second recess to an upper surface of the second insulating film provided at the lower part of the second recess.

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