Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-08-19

2000-03-14

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 30, 257321, 327420, H01L 2906, H01L 29788

Patent

active

060376058

ABSTRACT:
A semiconductor device includes spaced apart source and drain regions formed in a semiconductor substrate and a gate electrode insulatively spaced from a channel region between the source region and the drain region by a gate insulating film. Insulating layers are respectively formed between the source region and the channel region and between the drain region and the channel region.

REFERENCES:
patent: 5736765 (1998-04-01), Oh et al.
patent: 5834793 (1998-11-01), Shibata

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