Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-01-09
2007-01-09
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C257SE21403, C257SE21407, C438S048000, C438S128000, C438S149000, C438S151000
Reexamination Certificate
active
10737593
ABSTRACT:
In a semiconductor device and a method of manufacturing the semiconductor device, the source wires126of a pixel portion205are formed of material having low resistance (representatively, aluminum, silver, copper). The source wires of a driving circuit are formed in the same process as the gate wires162of the pixel portion and a pixel electrode163.
REFERENCES:
patent: 4394182 (1983-07-01), Maddox, III
patent: 5247190 (1993-09-01), Friend et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5616935 (1997-04-01), Koyama et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5719065 (1998-02-01), Takemura et al.
patent: 5830787 (1998-11-01), Kim
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5946561 (1999-08-01), Yamazaki et al.
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6124604 (2000-09-01), Koyama et al.
patent: 6144082 (2000-11-01), Yamazaki et al.
patent: 6218206 (2001-04-01), Inoue et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6365917 (2002-04-01), Yamazaki
patent: 6433841 (2002-08-01), Murade et al.
patent: 6515336 (2003-02-01), Suzawa et al.
patent: 2001/0030322 (2001-10-01), Yamazaki et al.
patent: 2002/0102783 (2002-08-01), Fujimoto et al.
patent: 2002/0134983 (2002-09-01), Yamazaki
patent: 1258103 (2000-06-01), None
patent: 1 005 093 (2000-05-01), None
patent: 1 005 093 (2000-05-01), None
patent: 1 006 589 (2000-06-01), None
patent: 1 045 447 (2000-10-01), None
patent: 1-205569 (1989-08-01), None
patent: 05-075033 (1993-03-01), None
patent: 06-148685 (1994-05-01), None
patent: 06-196494 (1994-07-01), None
patent: 7-130652 (1995-05-01), None
patent: 07-142734 (1995-06-01), None
patent: 07-235680 (1995-09-01), None
patent: 07235680 (1995-09-01), None
patent: 08-274336 (1996-10-01), None
patent: 10-092576 (1998-04-01), None
patent: 11-345975 (1999-12-01), None
patent: 2000-208778 (2000-07-01), None
patent: 2000-216396 (2000-08-01), None
patent: 2000-216398 (2000-08-01), None
patent: 2000-223716 (2000-08-01), None
patent: 2000-228527 (2000-08-01), None
patent: 2000-236097 (2000-08-01), None
patent: 2000-243975 (2000-09-01), None
patent: 2001-094113 (2001-04-01), None
patent: 2001-094116 (2001-04-01), None
patent: 2001-111060 (2001-04-01), None
patent: 2001-210832 (2001-08-01), None
patent: 406311 (2000-09-01), None
patent: WO 90/13148 (1990-11-01), None
Schenk, H. et al, “Polymers for Light Emitting Diodes,” EURODISPLAY '99, Proceedings of the 19th International Display Research Conference, Sep. 6-9, 1999, Berlin, Germany, pp. 33-37, (1999).
U.S. Appl. No. 09/528,113 (pending) to Yamazaki et al, including specification, claims, abstract, drawings and PTO filing receipt.
U.S. Appl. No. 09/533,040 (pending) to Yamazaki, including specification, claims, abstract, drawings, PTO filing receipt and allowed claims.
U.S. Appl. No. 09/559,185 (pending) to Yamazaki, including specification, claims, abstract, drawings, PTO filing receipt and pending claims as of Apr. 9, 2002.
Austrian Patent Office Search report re Singapore Application No. 200107179-4, mailed Aug. 13, 2003.
U.S. Appl. No. 09/433,705 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/436,984 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/447,574 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/464,200 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/471,359 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/714,891 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/432,662 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/435,154 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/441,025 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/454,146 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/618,930 (pending) including specification, claims, abstract and drawings.
U.S. Appl. No. 09/619,732 (pending) including specification, claims, abstract and drawings.
Koyama Jun
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Flynn Nathan J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilson Scott R.
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