Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-07-31

2007-07-31

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S195000, C257S256000, C257S263000, C257S268000, C257S280000, C257S282000, C257S281000

Reexamination Certificate

active

11392667

ABSTRACT:
A semiconductor device includes: a gate electrode that is provided on a semiconductor layer; a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode; a source wall that extends from the source electrode to a point between the gate electrode and the drain electrode through the region above the gate electrode, the source wall having a joining portion in the extending region; and an electrode portion that is joined to the joining portion and has a region extending closer to the drain electrode than the joining portion.

REFERENCES:
patent: 5739561 (1998-04-01), Wennekers
patent: 5742082 (1998-04-01), Tehrani et al.
patent: 2002/0140007 (2002-10-01), Sakamoto
patent: 2003/0183886 (2003-10-01), Inoue et al.
patent: 2005/0274977 (2005-12-01), Saito et al.
patent: 2006/0118823 (2006-06-01), Parikh et al.
patent: 2003-297854 (2003-10-01), None

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