Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-09-25

2007-09-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000

Reexamination Certificate

active

10897012

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device that can inhibit deterioration of the ferroelectric film cased by hydrogen generated in a wiring layer. The method of manufacturing a semiconductor device includes steps of forming the ferroelectric capacitor by laminating first electrode8,ferroelectric film9,second electrode10,covering the ferroelectric capacitor by insulating film11,forming opening13dthat exposes the second electrode10on the insulating film11,depositing or forming conductive hydrogen protective film20,forming wiring layer14on the conductive hydrogen protective film20,and patterning the wiring layer14and the conductive hydrogen protective layer20after forming the wiring layer14.

REFERENCES:
patent: 2004/0232468 (2004-11-01), Solayappan et al.
patent: 2005/0127395 (2005-06-01), Saigoh et al.
patent: 2003-252336 (2003-09-01), None

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