Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-06-27
2006-06-27
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S060000, C257S073000
Reexamination Certificate
active
07067845
ABSTRACT:
In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit. the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
REFERENCES:
patent: 5818070 (1998-10-01), Yamazaki et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6472684 (2002-10-01), Yamazaki et al.
Atsumi Tomoaki
Murakami Satoshi
Sakakura Masayuki
Tsukamoto Yosuke
Ha Nathan W.
Pham Long
Semiconductor Energy Laboratory Co,. Ltd.
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