Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-10-03
2006-10-03
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000, C438S629000, C438S638000
Reexamination Certificate
active
07115999
ABSTRACT:
A semiconductor device has an active element structure formed on a semiconductor substrate. The active element has a connection region formed on a surface of the semiconductor substrate. An insulating film is formed on the semiconductor substrate. A connection hole is formed in the insulating film, and has a bottom connected with the connection region. An interconnect trench is formed in the insulating film, and has a bottom connected with the connection region. A first conductive film is filled in a first region ranging from the connection region in the connection hole to a first height, and is composed of an alloy containing CoW or NiW. A second conductive film is formed in the interconnect trench, and is electrically connected with the first conductive film.
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Shibata Hideki
Tsumura Kazumichi
Andújar Leonardo
Kabushiki Kaisha Toshiba
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